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MWI 15-12 A7
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13
IC25 = 30 A = 1200 V VCES VCE(sat) typ. = 2.0 V
Preliminary Data
1 2
5 6
9 10 16 15 14
3 4 17
7 8
11 12
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 82 W; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 82 W; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 30 20 ICM = 35 VCEK VCES 10 140 V V A A A s W
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
q q q q q q q q q q q
Advantages
q q q
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.8 200 100 75 500 70 2.3 1.8 1000 70 2.6 6.5 0.9 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.88 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
q q
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 15 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V
q
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125C VCE = 600 V; IC = 15 A VGE = 15 V; RG = 82 W
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 15 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-4
021
MWI 15-12 A7
Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 25 17 A A
Equivalent Circuits for Simulation
Conduction
Symbol VF IRM trr RthJC Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight
Conditions IF = 15 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.4 1.7 16 130 2.7 V V A ns 2.1 K/W
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.37 V; R0 = 62 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.327 V; R0 = 30 m Thermal Response
Conditions
Maximum Ratings -40...+150 -40...+125 C C V~ Nm
IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.685 K/W Cth2 = 1.162 J/K; Rth2 = 0.195 K/W Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.758 K/W Cth2 = 0.639 J/K; Rth2 = 0.342 K/W
IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions
2500 2.7 - 3.3
Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g
Creepage distance on surface Strike distance in air with heatsink compound
6 6
Dimensions in mm (1 mm = 0.0394")
Higher magnification see outlines.pdf
(c) 2000 IXYS All rights reserved
2-4
MWI 15-12 A7
50
A 40
VGE = 17V 15V 13V 11V
50 A 40 30
11V VGE = 17V 15V 13V
IC
IC
30 20 10 0 0 1 2 3 4
VCE
20 10 0
9V TVJ = 125C
9V TVJ = 25C
5
6V7
0
1
2
3
4
5 VCE
6V7
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
A 40 IC
50 40 A 30
TVJ = 125C TVJ = 25C
IF
30 20
TVJ = 125C TVJ = 25C
20 10
VCE = 20V
10 0 4 6 8 10 12 VGE
0
14 V 16
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
40
trr
20
V
200 160 ns 120
15
VGE
IRM
A 30
trr
10
20
80
5
VCE = 600V IC = 15A
10
IRM
TVJ = 125C VR = 600V IF = 15A
MWI1512A7
40 0
0 0 20 40 60
QG
0 80 nC 100 0 200 400
600 800 A/ms -di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
(c) 2000 IXYS All rights reserved
3-4
MWI 15-12 A7
6
mJ Eon
120 ns td(on) 80 t Eoff
6
mJ td(off)
600 ns 400 t Eoff
4
4
VCE = 600V VGE = 15V RG = 82W TVJ = 125C
tr
2
Eon
VCE = 600V VGE = 15V RG = 82W TVJ = 125C
40
2
200
tf
0 0 10 20
IC
0
0
0 10 20 IC 30 A
0
30 A
Fig. 7 Typ. turn on energy and switching times versus collector current
3
mJ Eon 150 ns 100 tr
VCE = 600V VGE = 15V IC = 15A TVJ = 125C
Fig. 8 Typ. turn off energy and switching times versus collector current
2.0
mJ Eoff td(off) 800 ns 600 t
Eon td(on)
2
t
Eoff 1.5
1.0
50
VCE = 600V VGE = 15V IC = 15A TVJ = 125C
400
1
0.5
200
tf
0 0 20 40 60 80 100
RG
120
W
0 140
0.0 0 20 40 60 80 100
RG
120
W 140
0
Fig. 9 Typ. turn on energy and switching times versus gate resistor
40
A ICM 10 K/W ZthJC 1
Fig.10 Typ. turn off energy and switching times versus gate resistor
diode
30
IGBT
0.1
20
0.01
10
RG = 82 W TVJ = 125C
single pulse
0.001 0.0001 0.00001 0.0001 0.001
MWI1512A7
0 0 200 400 600 800 1000 1200 1400 V VCE
0.01
0.1 t
1
s 10
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
(c) 2000 IXYS All rights reserved
4-4

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